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MP4501
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One)
MP4501
High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
Industrial Applications Unit: mm
* * * * *
Package with heat sink isolated to lead (SIP 12 pins) High collector power dissipation (4-device operation) : PT = 5 W (Ta = 25C) High collector current: IC (DC) = 3 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1.5 A) Diode included for absorbing fly-back voltage
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1-device operation) Collector power dissipation (4-device operation) Isolation voltage Junction temperature Storage temperature range Ta = 25C PT Tc = 25C VIsol Tj Tstg 25 1000 150 -55 to 150 V C C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 120 100 6 3 6 0.5 3.0 5.0 W Unit V V V A A W
JEDEC JEITA TOSHIBA
2-32B1A
Weight: 6.0 g (typ.)
Array Configuration
2 3 4 9 10 11
1
5
8
12
6 R1 R2 R1 4.5 k R2 300
7
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Marking
MP4501
JAPAN
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Thermal Characteristics
Characteristics Thermal resistance from junction to ambient (4-device operation, Ta = 25C) Thermal resistance from junction to case (4-device operation, Tc = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 C Rth (j-c) 5.0 C/W Symbol Max Unit
Rth (j-a)
25
C/W
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton Input Switching time Storage time tstg IB1 20 s Test Condition VCB = 120 V, IE = 0 A VCE = 100 V, IB = 0 A VEB = 6 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 10 mA, IB = 0 A VCE = 2 V, IC = 1.5 A VCE = 2 V, IC = 3 A IC = 1.5 A, IB = 3 mA IC = 1.5 A, IB = 3 mA VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0 A, f = 1 MHz Output 20 Min 0.5 120 100 2000 1000 Typ. 60 30 0.3 Max 10 10 2.5 15000 1.5 2.0 Unit A A mA V V
Saturation voltage
V MHz pF
Transition frequency Collector output capacitance Turn-on time
IB1 IB2
2.0
s
Fall time
tf IB1 = -IB2 = 3 mA, duty cycle 1%
IB2
VCC = 30 V 0.4
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MP4501
Emitter-Collector Diode Ratings and Characteristics (Ta = 25C)
Characteristics Maximum forward current Surge current Forward voltage Reverse recovery time Reverse recovery charge Symbol IFM IFSM VF trr Qrr t = 1 s, 1 shot IF = 1 A, IB = 0 A IF = 3 A, VBE = -3 V, dIF/dt = -50 A/s Test Condition Min Typ. 1.2 1.0 5 Max 3 6 1.8 Unit A A V s C
Flyback-Diode Rating and Characteristics (Ta = 25C)
Characteristics Maximum forward current Reverse current Reverse voltage Forward voltage Symbol IFM IR VR VF VR = 120 V IR = 100 A IF = 0.5 A Test Condition Min 120 Typ. Max 3 0.4 1.8 Unit A A V V
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IC - VCE
6 10 5 3 1 0.5 0.3 6 Common emitter 5 VCE = 2 V
IC - VBE
(A)
(A)
Collector current IC
3
0.2
Collector current IC
4
4
3
2
IB = 0.15 mA Common emitter Tc = 25C 0 1 2 3 4 5 6 7
2
1
1
Tc = 100C
25
-55
0 0
0 0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Collector-emitter voltage
VCE (V)
Base-emitter voltage
VBE (V)
hFE - IC
20000 10000 Common emitter VCE = 2 V 2.4
VCE - IB
Common emitter Tc = 25C
VCE (V)
2.0
DC current gain hFE
5000 3000
Tc = 100C 25 -55
1.6
IC = 6 A 5 4 3 2 1
Collector-emitter voltage
1.2
1000 500 300 0.05 0.1 0.3 1 3 10
0.8 0.1 0.4 0.5
)
0 0.1
Collector current IC
(A)
0.3
1
3
10
30
100
300
Base current IB (mA)
VCE (sat) - IC
10 10 Common emitter 5 3 IC/IB = 500
VBE (sat) - IC
Base-emitter saturation voltage VBE (sat) (V)
Common emitter 5 3 Tc = -55C IC/IB = 500
Collector-emitter saturation voltage VCE (sat) (V)
1
Tc = -55C
1
100
25
0.5 0.3 0.1
100
25
0.5 0.3 0.1
0.3
1
3
10
0.3
1
3
10
Collector current IC
(A)
Collector current IC
(A)
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MP4501
rth - tw
300
Transient thermal resistance rth (C/W)
100
Curves should be applied in thermal limited area. (single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width.
(4)
30 (3) 10 (2) (1) -No heat sink/Attached on a circuit board(1) 1-device operation 1 (2) 2-device operation (3) 3-device operation (4) 4-device operation 0.3 0.001 0.01 0.1 1 10 Circuit board 100 1000
3
Pulse width
tw (s)
Safe Operating Area
8 10 5 3 10 ms*
PT - Ta
(1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Attached on a circuit board (4) (3) 4 (2) (1) 2 Circuit board
IC max (pulsed)* 1 ms*
100 s*
PT (W) Total power dissipation
6
Collector current IC
(A)
1 0.5 0.3
0.1 0.05 0.03 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.01 0.3 1 3 10 0 0 VCEO max 30 100 40 80 120 160 200
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Tj - PT
160
Junction temperature increase Tj (C)
(1) 120
(2) (3) (4)
80 Circuit board Attached on a circuit board 40 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 2 4 6 8 10
0 0
Total power dissipation
PT
(W)
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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